Tail-state distribution and trapping probability in a-Si:H investigated by time-of-flight experiments and computer simulations
Author:
Affiliation:
1. a Institut für Physikalische Elektronik, Universität Stuttgart , Pfaffenwaldring 47, D-7000, Stuttgart , 80 , F.R. Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818908218394
Reference32 articles.
1. Diffusion Lengths in a-SiGe:H and a-SiC:H Alloys from Optical Grating Technique
2. The theory of anomalous carrier pulse propagation in amorphous semiconductors
3. Low-temperature electron transport near the mobility edge of amorphous silicon
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