Density of states study of sputtered and evaporated a-Si: H by space-charge-limited current technique
Author:
Affiliation:
1. a Universität Kaiserslautern, Fachbereich Physik , Postfach 3049, D-6750 , Kaiserslautern , F.R. Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818508240571
Reference22 articles.
1. Space‐charge limited conduction inn+nn+amorphous hydrogenated silicon films
2. Anomalous temperature dependence of space-charge-limited currents and photoconductivity in amorphous silicon
3. Gap states study of evaporated silicon films before and after hydrogenation
4. DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
5. Threshold switching in hydrogenated amorphous silicon
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