Anomalous temperature dependence of space-charge-limited currents and photoconductivity in amorphous silicon
Author:
Affiliation:
1. a Tata Institute of Fundamental Research , Homi Bhabha Road, Bombay , 400005 , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642817408246513
Reference18 articles.
1. Evidence of space-charge-limited current in amorphous silicon Schottky diodes
2. Space‐charge limited conduction inn+nn+amorphous hydrogenated silicon films
3. Investigations of the effect of nonexponential distribution of gap states on photoconductivity
4. DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
5. Threshold switching in hydrogenated amorphous silicon
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1. Transport in n[sup +](p[sup +]) Si–AlQ–Al junctions;Journal of Applied Physics;2000
2. The Meyer-Neldel rule, space-charge-limited currents and photoconductmty in hydrogenated amorphous silicon;Philosophical Magazine B;2000-01
3. Space‐charge‐limited current diode model for amorphous silicon solar cells and their degradation;Journal of Applied Physics;1987-06-15
4. Extended step‐by‐step analysis in space‐charge‐limited current: Application to hydrogenated amorphous silicon;Journal of Applied Physics;1986-08-15
5. Feynman path integrals: Some exact results and applications;Physics Reports;1986-05
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