Microscopic model of the Staebler-Wronski effect in intrinsic amorphous hydrogenated silicon
Author:
Affiliation:
1. a Department of Physics , North Carolina State University , Raleigh , North Carolina , 27695-8202 , U.S.A.
2. b Imaging Science and Engineering Laboratory, Tokyo Institute of Technology , Nagatsuta, Midori-ku , Yokohama , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818508240570
Reference24 articles.
1. STUDY OF LIGHT INDUCED CHANGES IN a-Si:H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS
2. Light‐induced dangling bonds in hydrogenated amorphous silicon
3. Diffusion length of holes ina‐Si:H by the surface photovoltage method
4. On the mechanism of light‐induced effects in hydrogenated amorphous silicon alloys
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