Absence of band-gap surface states on clean amorphous silicon
Author:
Affiliation:
1. a Stanford Electronics Laboratories, Standford University , Stanford , California , 94305 , U.S.A.
2. b Hewlett Packard Laboratories , 1501 Page Mill Road, Palo Alto, California , 94303 , U.S.A
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818108221898
Reference18 articles.
1. Structural, Optical, and Electrical Properties of Amorphous Silicon Films
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4. Ph.D. Thesis;Garner C. M.,1978
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