Noise spectroscopy in amorphous silicon films-Reference-Cited by-同舟云学术

Noise spectroscopy in amorphous silicon films

Published:1983-07 Issue:1 Volume:48 Page:31-45
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Anderson J. C.¹

Affiliation:

1. a Department of Electrical Engineering , Imperial College of Science and Technology , London , SW7 2BT, England

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818308226429

Reference13 articles.

1. Capture cross-section and density of deep gap states in a−SiHx schottky barrier structures

2. Recombination mechanisms in amorphous silicon‐based alloys

3. Hole drift mobility in amorphous silicon

4. Allan , D. Le Comber , P. G. and Spear , W. E. Proceedings of the Seventh International Conference on Amorphous and Liquid Semiconductors. Edited by: Spear , W. E. pp.323University of Edinburgh: CICL.

5. Temperature variation of the mobility gap in non-polar amorphous semiconductors

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of photoluminescence spectra and quasi-Fermi level splitting in μc-Si:H solar cells;Solar Energy Materials and Solar Cells;2010-11

2. Determination of the mobility gap of intrinsic μc-Si:H in p-i-n solar cells;Journal of Applied Physics;2009-02-15

3. Conductance fluctuations in a-Si : H: effects of alloying and device structure;Journal of Materials Science: Materials in Electronics;2003

4. Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films;Journal of Materials Science: Materials in Electronics;2003

5. Conductance fluctuations in undoped hydrogenated amorphous silicon–germanium alloy thin films;Journal of Non-Crystalline Solids;2002-04