Thermalization and radiative recombination of photo-excited carriers in a-Si: H
Author:
Affiliation:
1. a Ecole Polytechnique Fédérate de Lausanne , Institut de Physique Appliquée , CH-1015, Lausanne , Switzerland
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818708221332
Reference17 articles.
1. Direct spectroscopic determination of the distribution of occupied gap states in a-Si:H
2. Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous Silicon
3. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
4. Systematic investigation of picosecond photoinduced absorption in hydrogenated amorphous silicon
5. Electron drift mobility in amorphous Si: H
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3. Transient luminescence in amorphous silicon;Journal of Non-Crystalline Solids;1991-01
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