The influence of aluminium upon electronic transport in r.f. sputtered amorphous Si : H
Author:
Affiliation:
1. a Dundee College of Technology , Bell Street, Dundee , DD1 1HG , Scotland
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818608240652
Reference12 articles.
1. Microwave Spectrum of Methyl Mercaptan a–Type R–Branch Transitions
2. The Preparation and Properties of Amorphous Silicon
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1. N-type (P, Sb) and p-type (B) doping of hydrogenated amorphous Si by reactive rf co-sputtering;physica status solidi (b);2003-01
2. P-type doping of hydrogenated amorphous silicon films with boron by reactive radio-frequency co-sputtering;Physica B: Condensed Matter;2001-12
3. Aluminium doping of a-Ge:H;Journal of Physics: Condensed Matter;1993-08-16
4. Aluminium in hydrogenated amorphous germanium;Philosophical Magazine Letters;1993-04
5. Modification of the optical properties of hydrogenated amorphous silicon by alloying with Al, Ga and S;Solar Energy Materials and Solar Cells;1992-10
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