N-type (P, Sb) and p-type (B) doping of hydrogenated amorphous Si by reactive rf co-sputtering
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Modification of amorphous hydrogenated silicon by co-sputtered aluminum
2. Sputtered hydrogenated amorphous Si alloyed with Al
3. High ConductiveP-Type Films of Si100-xAlx:H Fabricated by Co-Sputtering and Subsequent Annealing
4. The influence of aluminium upon electronic transport in r.f. sputtered amorphous Si : H
5. Doping effects of aluminium on the properties of hydrogenated amorphous silicon–carbon alloy films prepared by magnetron sputtering
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1. Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition;Japanese Journal of Applied Physics;2023-10-01
2. Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC;Japanese Journal of Applied Physics;2021-03-01
3. Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC;Japanese Journal of Applied Physics;2020-05-01
4. Effects of Co-Doped B and Al on the Improvement of Electrical Properties of Ga and P Contaminated Upgraded Metallurgical-Grade Silicon Materials;Journal of Electronic Materials;2020-01-14
5. Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers;Japanese Journal of Applied Physics;2019-09-01
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