Dopant and defect states in a-Si:H
Author:
Affiliation:
1. a Xerox Palo Alto Research Center , Palo Alto , California , 94304 , U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818508240597
Reference23 articles.
1. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
2. Temperature dependence of ESR spectra of doped a-Si:H
3. The correlation energy of the dangling silicon bond in a Si:H
4. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
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