The electronic structure of defects in amorphous GaAs
Author:
Affiliation:
1. a School of Physics, National Institute for Higher Education , Dublin 9 , Ireland
2. b Central Electricity Research Laboratories , Leatherhead , Surrey , England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818408238850
Reference26 articles.
1. Self-consistent calculations of the electronic structure for ideal Ga and As vacancies in GaAs
2. AsGaantisite defect in GaAs
3. Bound and resonant (110) surface electronic states for GaAs, GaP and GaSb
4. Electronic structure and atomic configuration at the cleavage surface of zincblende compounds
5. Local order in amorphous III-V compounds A1-xBxby electron diffraction, in relation with electronic properties
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1. Physical properties of amorphous gallium arsenide;Handbook of Thin Films;2002
2. Electrical Conductivity of Non-Hydrogenated Amorphous Tetracoordinated Semiconductors;Disordered Semiconductors;1987
3. Electronic structure of amorphous III-V and II-VI compound semiconductors and their defects;Physical Review B;1986-12-15
4. Self-compensation and the absence of doping in amorphous GaAs;Physical Review B;1986-03-15
5. A study of defects in amorphous GaAs by electron paramagnetic resonance;Journal of Non-Crystalline Solids;1985-12
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