Bound and resonant (110) surface electronic states for GaAs, GaP and GaSb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference42 articles.
1. Evidence for a Surface-State Exciton on GaAs(110)
2. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
3. Influence of volume dope on Fermi level position at gallium arsenide surfaces
4. Contact potential differences for III–V compound surfaces
5. Electronic surface properties of III–V semiconductors: Excitonic effects, band‐bending effects, and interactions with Au and O adsorbate layers
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