The decay rate of transient photocurrents in semiconductors
Author:
Affiliation:
1. a Department of Physics , Bar-Ilan University , Ramat-Gan , 52100 , Israel
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818508238928
Reference12 articles.
1. Anomalous transient-time dispersion in amorphous solids—A comment
2. Small signal time‐of‐flight transients
3. Drift Mobilities of Electrons and Holes and Space-Charge-Limited Currents in Amorphous Selenium Films
4. Determination of the extended-state electron mobility in a-Si
5. Generalizations of multiple trapping
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3. An extension of the multiple-trapping model for transient photocurrents in amorphous semiconductors;Philosophical Magazine B;1989-10
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