Light-induced changes, adsorbate effects and surface photovoltage in a-Si : H
Author:
Affiliation:
1. a Department of Physics , Indian Institute of Technology , Kanpur , 208016 , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818408246520
Reference13 articles.
1. Origin of the photo-induced changes in hydrogenated amorphous silicon
2. Theory of the small-signal photovoltage at semiconductor surfaces
3. Photoelectronic effects in amorphous silicon based alloys
4. Large-Signal Surface Photovoltage Studies with Germanium
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1. Energies of [001] small angle grain boundaries in aluminum;Journal of Materials Science;2005-06
2. Amorphous silicon as hydrogen glass;Bulletin of Materials Science;1996-02
3. Direct determination of the band‐gap states in hydrogenated amorphous silicon using surface photovoltage spectroscopy;Applied Physics Letters;1995-07-17
4. Spatial distribution of light‐induced defects in hydrogenated amorphous silicon;Applied Physics Letters;1995-02-06
5. Systematic study of light-induced effects in hydrogenated amorphous silicon;Physical Review B;1992-06-15
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