Calculation of the localized electronic states associated with static and moving dislocations in silicon
Author:
Affiliation:
1. a Department of Physics , University of Exeter , Stocker Road, Exeter, Devon EX4 4QL, England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818308246489
Reference19 articles.
1. Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in silicon
2. Orthogonalized linear combinations of atomic orbitals: Application to the calculation of energy bands of Si III
3. Electronic structure based on the local atomic environment for tight-binding bands. II
4. Energy levels in ideal and reconstructed models of a silicon vacancy
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