Light-induced defect creation under pulsed subbandgap illumination in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Light-induced defect creation under pulsed subbandgap illumination in hydrogenated amorphous silicon

Published:2003-05 Issue:5 Volume:83 Page:341-349
ISSN:0950-0839
Container-title:Philosophical Magazine Letters
language:en
Short-container-title:Philosophical Magazine Letters

Author:

Morigaki K.¹,Hikita H.²,Takemura H.³,Yoshimura T.³,Ogihara C.³

Affiliation:

1. a Department of Electrical and Digital-System Engineering , Hiroshima Institute of Technology , Miyake, Saeki-ku, Hiroshima , 731-5193 , Japan

2. b Physics Laboratory , Meikai University , Urayasu, Chiba , 279-8550 , Japan

3. c Department of Applied Science , Yamaguchi University , Ube , 755-8611 , Japan

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/0950083031000087457

Reference18 articles.

1. Light‐induced dangling bonds in hydrogenated amorphous silicon

2. New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon

3. Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H

4. The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:H

5. The Correlation between Photocreation of Dangling Bonds and Si-H Bond Clusters in a-Si:H

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1. Nonlinear increase, invisibility, and sign inversion of a localized fs-laser-induced refractive index change in crystals and glasses;Light: Science & Applications;2020-04-20

2. Amorphous Semiconductors: Structure, Optical, and Electrical Properties;Springer Handbook of Electronic and Photonic Materials;2017

3. Long-term metastability of light-induced defects in hydrogenated amorphous silicon;Philosophical Magazine Letters;2016-05-03

4. Hydrogenated Microcrystalline Silicon;Light-Induced Defects in Semiconductors;2014-09-13

5. Reversible photo-induced deformation of amorphous carbon nitride thin films;Diamond and Related Materials;2014-01

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