'Magic-size' GeSi and Si nanocrystals created by ion bombardment of hexagonal SiC; a molecular dynamics study
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/0950083031000096196
Reference43 articles.
1. Towards Quantum Structures in SiC
2. A finite-element study of strain fields in vertically aligned InAs islands in GaAs
3. BIBLIOGRAPHISCHES INSTITUT. 1988.Halbleiter Elektronik, 120Leipzig: Schöppies.
4. Molecular-dynamics simulation of growth of nanocrystals in an amorphous matrix
5. Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron‐diffraction measurements
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1. Diffusion of fission products and radiation damage in SiC;Journal of Physics D: Applied Physics;2013-10-28
2. Matrix-dependent structure of GeSi nanocrystals in SiC;Journal of Electron Microscopy;2005-12-22
3. TEM-characterization of magnetic samarium- and cobalt-rich-nanocrystals formed in hexagonal SiC;Journal of Magnetism and Magnetic Materials;2005-06
4. The Formation of Clusters and Nanocrystals in Er-Implanted Hexagonal Silicon Carbide;Microscopy and Microanalysis;2004-03-17
5. Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy;Silicon Carbide;2004
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