A finite-element study of strain fields in vertically aligned InAs islands in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370991
Reference28 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields
3. Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
4. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
5. Ultranarrow Luminescence Lines from Single Quantum Dots
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