Vacancy clustering and diffusion in germanium using kinetic lattice Monte Carlo simulations-Reference-Cited by-同舟云学术

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Vacancy clustering and diffusion in germanium using kinetic lattice Monte Carlo simulations

Published:2009-03 Issue:3 Volume:35 Page:234-240
ISSN:0892-7022
Container-title:Molecular Simulation
language:en
Short-container-title:Molecular Simulation

Author:

Kang J.W.,Choi Y.G.,Lee J.H.,Lee S.H.,Oh H.J.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemical Engineering,Modelling and Simulation,Information Systems,General Chemistry

Link

http://www.tandfonline.com/doi/pdf/10.1080/08927020802395427

Reference28 articles.

1. Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers

2. Atomic scale simulations of arsenic–vacancy complexes in germanium and silicon

3. Molecular dynamics simulation of intrinsic point defects in germanium

4. Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals

5. Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium

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1. Thermodynamic Formation Properties of Point Defects in Germanium Crystal;Materials;2022-06-06

2. Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability;Journal of Applied Physics;2013-09-07

3. A general method for spatially coarse-graining Metropolis Monte Carlo simulations onto a lattice;The Journal of Chemical Physics;2013-03-21

4. Kinetic Lattice Monte Carlo Simulations of Vacancy Diffusion in Silicon Below the Melting Point;Journal of Computational and Theoretical Nanoscience;2010-03-01

5. Vacancy Characteristics During Silicon Crystal Cooling via Kinetic Lattice Monte Carlo Simulations;Journal of Computational and Theoretical Nanoscience;2009-11-01

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