On the low-temperature efficiency of photoluminescence in a-Si: H and other materials
Author:
Affiliation:
1. a Department of Physics , The University of Sheffield , Sheffield S3 7RH, England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639108224439
Reference24 articles.
1. Comparison of Monte Carlo and analytic results for nearest-available-neighbor pairing in one, two, and three dimensions
2. Photoluminescence properties of a-SiNx: H alloys
3. Low energy excitation of photoluminescence in a-Si:H : Temperature and intensity effects
4. A Monte Carlo investigation of the nearest-available-neighbour distribution in three dimensions A model for electron-hole recombination in semiconductors
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1. Photo- and electro-luminescence of a-Si:H and mixed-phase alloys;Solar Energy Materials and Solar Cells;2003-07
2. Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination;Physical Review B;1997-06-15
3. Electroluminescence from hydrogenated amorphous silicon p-i-n diodes;Journal of Non-Crystalline Solids;1995-10
4. A new model of low-temperature photoluminescence in amorphous semiconductors;Journal of Non-Crystalline Solids;1995-10
5. Time resolved electroluminescence in hydrogenated amorphous silicon;Applied Physics Letters;1993-01-11
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