Time-domain measurements of spin relaxation processes of dangling-bond defects in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

Time-domain measurements of spin relaxation processes of dangling-bond defects in hydrogenated amorphous silicon

Published:1994-02 Issue:2 Volume:69 Page:263-275
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Isoya J.¹,Yamasaki S.²³,Matsuda A. A.²,Tanaka K.²³

Affiliation:

1. a University of Library and Information Science , 1-2 Kasuga, Tsukuba City , Ibaraki , 305 , Japan

2. b Electrotechnical Laboratory , 1-1-4 Umezono, Tsukuba City , Ibaraki , 305 , Japan

3. c National Institute for Advanced Interdisciplinary Research , 1-1-4 Higashi, Tsukuba City , Ibaraki , 305 , Japan

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639408240108

Reference29 articles.

1. Anomalous low-temperature thermal properties of glasses and spin glasses

2. Anomalous electron-spin relaxation in amorphous silicon

3. On the interaction of nuclear spins in a crystalline lattice

4. Bowman , M. K. 1979. Time Domain Electron Spin Resonance, Edited by: Kevan , L. and Schwartz , R. N. 67–105. New York: Wiley. Bowman, M. K., and Kevan, L., 1977,J. Phys. Chem.,81, 456

5. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering

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