Relaxation and crystallization of amorphous silicon carbide probed by optical measurements
Author:
Affiliation:
1. a Dipartimento di Fisica , Corso Italia 57, Catania , Italy
2. b Istituto Nazionale de Fisica per la Materia , Corso Italia 57, Catania , Italy
3. c Universite Moulay Ismail , Meknes , Morocco
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639708241097
Reference21 articles.
1. Recrystallization of ion-implanted α-SiC
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3. Thermal stability of a-Si1−xCx: H films grown by PECVD with different gas sources
4. Optical properties of SiC for crystalline/amorphous pattern fabrication
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