Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition
Author:
Affiliation:
1. a Utrecht University, Debye Institute , Po Box 80, 000, 3508 , Ta Utrecht , The Netherlands
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639708241096
Reference28 articles.
1. Amorphous and microcrystalline silicon films deposited by hot‐wire chemical vapor deposition at filament temperatures between 1500 and 1900 °C
2. Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
3. Properties of hydrogenated amorphous silicon produced at high temperature
4. Production of high‐quality amorphous silicon films by evaporative silane surface decomposition
5. Hydrogenated microcrystalline silicon films produced at low temperature by the hot wire deposition method
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