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Point defects in M2 – x In x Te3 (M = Sb or Bi) crystals

  • Published:1995-12 Issue:6 Volume:72 Page:627-636
  • ISSN:1364-2812
  • Container-title:Philosophical Magazine B
  • language:en
  • Short-container-title:Philosophical Magazine B

Author:

Horák J.1,Karamazov S.2,Losŝtuák P.3

Affiliation:

1. a Institute of Inorganic Chemistry, Academy of Sciences of the Czech Republic , Pelleova 24, 160 00 , Prague 6-Dejvice , Czech Republic

2. b Department of Physics , University of Pardubice , Ĉs. Legií 565, 532 10 , Pardubice , Czech Republic

3. c Department of General and Inorganic Chemistry , University of Pardubice , Cs. Legii 565, 532 10 , Pardubice , Czech Republic

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Discussion on the electrical and thermoelectrical properties of amorphous In–Sb–Te Films;Applied Physics A;2016-03

2. n–p transformation in TlBi(1−x)SbxTe2 system;Journal of Alloys and Compounds;2009-01

3. Characterization of Mn-doped Sb1.5Bi0.5Te3single crystals;Radiation Effects and Defects in Solids;2001-04

4. Characterization and nanometer-scale modifications of Bi[sub 2]Te[sub 3] surface via atomic force microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

5. Characterisation of Bi2Se3 Crystals Highly Doped with Pb;Crystal Research and Technology;1997
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