n–p transformation in TlBi(1−x)SbxTe2 system-Reference-Cited by-同舟云学术

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n–p transformation in TlBi(1−x)SbxTe2 system

Published:2009-01 Issue:1-2 Volume:467 Page:65-71
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Paraskevopoulos K.M.,Hatzikraniotis E.,Vinga E.S.,Ozer M.,Anagnostopoulos A.,Polychroniadis E.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference24 articles.

1. Energy spectrum of rhombohedral III-V-VI2compounds: ternary isoelectronic analogues of bismuth-type semimetals

2. Optical Properties of p–TISBTe2 Single Crystals

3. Single crystal growth and characterization of narrow-gap - mixed crystals

4. Thermoelectric properties of TlBiTe2

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the preparation and electrical properties of thallium bismuth diselenide crystals;Journal of Crystal Growth;2020-09

2. Thermoelectric properties of TlSbTe2 doped with In and Yb;Journal of Alloys and Compounds;2019-07

3. Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds;Journal of Electronic Materials;2015-09-14

4. Models for the Analysis of IR Reflectivity in TlBiTe2with Different Size of Twins;Acta Physica Polonica A;2012-01

5. Single-Dirac-Cone Topological Surface States in theTlBiSe2Class of Topological Semiconductors;Physical Review Letters;2010-07-16

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