Effect of the addition of the impurity Mn on the electronic properties of the amorphous semiconductor (Se70Te30)99·9Mn0·1
Author:
Affiliation:
1. a Non-Crystalline Semiconductor Laboratory, Physics Department , Maharshi Dayanand University , Rohtak , 124 001 , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639608243528
Reference22 articles.
1. Nature of Localized States in Amorphous Semiconductors—A Study by Electron Spin Resonance
2. Pressure-induced structural transformations in Bi-doped amorphous germanium sulfide
3. Electronic conduction in Pb-modified amorphous semiconductors Pb20GexSe80-x exhibiting a p-n transition
4. Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors
5. Mn-impurity-induced simple pair defect states in Bi-modified amorphous semiconductors Ge20S79·5-xBixMn0·5
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1. Effect of Nd doping on structural, dielectric and thermodynamic properties of PZT (65/35) ceramic;Physica B: Condensed Matter;2007-05
2. Electrical properties of some chalcogenide glassy alloys of the system Se100−xInx;Physica B: Condensed Matter;2001-12
3. DC ELECTRICAL PROPERTIES OF SOME CHALCOGENIDE GLASSY ALLOYS OF THE SYSTEM Se100-xInx;Surface Review and Letters;2001-06
4. Frequency and Temperature Dependence of the Dielectric Properties of Se90Ge10 - xInx Thin Films at Low Temperature;physica status solidi (a);2001-06
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