Generation of the first sharp diffraction peak by extended-range ordering of atoms and voids in amorphous silicon-Reference-Cited by-同舟云学术

Generation of the first sharp diffraction peak by extended-range ordering of atoms and voids in amorphous silicon

Published:1995-04 Issue:4 Volume:71 Page:611-624
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Uhlherr A.¹²,Elliott S. R.¹

Affiliation:

1. a Department of Chemistry , University of Cambridge , Lensfield Road, Cambridge , CB2 1EW , England

2. b Division of Chemicals and Polymers, Commonwealth Scientific and Industrial Research Organization , Private Bag 10, Rosebank MDC, Clayton , 3169 , Australia

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639508238550

Reference23 articles.

1. Anisotropy of structural models for amorphous materials

2. Structure of Binary Liquid Mixtures. II. Resistivity of Alloys and the Ion-Ion Interaction

3. Structural Aspects of the Electrical Resistivity of Binary Alloys

4. Sphere and distance models for binary disordered systems

5. Interstices, diffusion doorways and free volume percolation studies of a dense random packed atomic structure

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