Effect of ferroelectric domains on electric properties of single layer graphene-Reference-Cited by-同舟云学术

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Effect of ferroelectric domains on electric properties of single layer graphene

Published:2019-04-04 Issue:1 Volume:542 Page:93-101
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Zelenovskii P.¹²,Romanyuk K.¹²,Vidyasagar R.²,Akhmatkhanov A.¹³,Zhao P.⁴,Shur V. Ya.¹³,Kholkin A. L.¹²

Affiliation:

1. School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia;

2. Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, Aveiro, Portugal;

3. Labfer Ltd., Ekaterinburg, Russia;

4. Institute of Applied Mechanics, Zhejiang University, Hangzhou, China

Funder

Russian Foundation for Basic Research

Government of the Russian Federation

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/00150193.2019.1574669

Reference25 articles.

1. Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

2. Graphene Field-Effect Transistors with Ferroelectric Gating

3. Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2

4. Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

5. Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Changes in the Raman Spectrum of Monolayer Graphene under Compression/Stretching Strain in Graphene/Piezoelectric Crystal Structures;Nanomaterials;2023-01-14

2. Optically Rewritable Memory in a Graphene–Ferroelectric-Photovoltaic Heterostructure;Physical Review Applied;2020-06-15

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