Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3467450
Reference20 articles.
1. Graphene: Status and Prospects
2. Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz
3. Electronic spin transport and spin precession in single graphene layers at room temperature
4. Magnetotransport properties of mesoscopic graphite spin valves
5. Nanowire transistors with ferroelectric gate dielectrics: Enhanced performance and memory effects
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