Effect of Dry Etching of TiO2Thin Films Using Inductively Coupled Plasma
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150193.2013.846201
Reference22 articles.
1. Structural and electrical characterization of TiO2 grown from titanium tetrakis-isopropoxide (TTIP) and TTIP/H2O ambients
2. MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics
3. High-κ gate dielectrics: Current status and materials properties considerations
4. The dry etching property of TiO2 thin films using metal-insulator-metal capacitor in inductively coupled plasma system
5. Dry Etching Properties of TiO2Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of argon etched Ta2O5 thin films;Applied Physics A;2019-11-08
2. Etching Characteristics and Mechanisms of TiO2 Thin Films in CF4 + Ar, Cl2 + Ar and HBr + Ar Inductively Coupled Plasmas;Plasma Chemistry and Plasma Processing;2016-08-02
3. Surface Etching of TiO2Thin Films Using High Density Cl2/Ar Plasma;Transactions on Electrical and Electronic Materials;2015-12-25
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