Electrothermal numerical modeling of multifilamentary conduction in Ta2O5−x /WO3−x bilayer oxides based RRAM-Reference-Cited by-同舟云学术

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Electrothermal numerical modeling of multifilamentary conduction in Ta2O5−x /WO3−x bilayer oxides based RRAM

Published:2016-08-08 Issue:1 Volume:500 Page:229-240
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Asapu Shiva¹,Maiti Tanmoy²

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, India

2. Plasmonics and Perovskites Laboratory, Department of Material Sciences and Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/00150193.2016.1217706

Reference32 articles.

1. Resistive switching in transition metal oxides

2. Ferroelectric memories: a possible answer to the hardened nonvolatile question

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrothermal analyses in Cu/ZrO2/Pt CBRAM memory using a dual-phase-lag model;Journal of Computational Electronics;2022-06-23

2. Analysis of the transient Joule heating effect in a conductive-bridge random-access memory (CBRAM) using a single-phase-lag (SPL) model;Journal of Computational Electronics;2021-03-15

3. An electro-thermal computational study of conducting channels in dielectric thin films using self-consistent phase-field methodology: A view toward the physical origins of resistive switching;Journal of Applied Physics;2020-10-28

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