Electrical Properties of Cr Doped Pb0.5Sr0.5TiO3Thin Films Prepared by Chemical Solution Deposition Method
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150193.2010.484362
Reference16 articles.
1. (Ba,Sr)TiO3Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes
2. Structural and electrical characteristics of chemical solution derived (Bi3.2La0.4Nd0.4)Ti3O12 thin films
3. Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor
4. The effect of annealing on the structure and dielectric properties of BaxSr1−xTiO3 ferroelectric thin films
5. Mg-doped Ba0.6Sr0.4TiO3 thin films for tunable microwave applications
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1. Control of VO•• ∼ TiTi′ dipole pairs as well as MgTi″ defects on dielectric properties of Mg doped (Pb0.35Sr0.65)TiO3 thin film;Journal of Applied Physics;2016-01-07
2. Electrically tunable materials for microwave applications;Applied Physics Reviews;2015-03
3. The effect of Mg doping on the dielectric and tunable properties of Pb0.3Sr0.7TiO3 thin films prepared by sol–gel method;Applied Physics A;2013-03-06
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