The effect of annealing on the structure and dielectric properties of BaxSr1−xTiO3 ferroelectric thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118106
Reference8 articles.
Cited by 220 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Impact of electrode materials on microstructure, leakage current and dielectric tunable properties of lead-free BSZT thin films;Ceramics International;2021-08
2. The Effect of Photoconductive Mole Fraction Based on Thin Film BaxSr1-xTiO3 (x = 0.000; 0.125; 0.250; 0.375; 0.500) on Electrical Properties and Diffusivity Coefficient;Biointerface Research in Applied Chemistry;2021-04-07
3. Domain Matched Epitaxial Growth of Dielectric Thin Films;Materials Horizons: From Nature to Nanomaterials;2020
4. Physical and Chemical Properties of Dimedone “Base Schiff” for Organic Semiconductor Applications;Journal of Electronic Materials;2019-09-06
5. Influence of Thermal Treatment of Sol-Gel Derived (Ca0.8Sr0.2)ZrO3 Dielectric Thin Films;2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD);2019-07
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