Orders-of-magnitude enhancement in conductivity tuning in InGaZnO thin-film transistors via SiNx passivation and dual-gate modulation-Reference-Cited by-同舟云学术

Orders-of-magnitude enhancement in conductivity tuning in InGaZnO thin-film transistors via SiNx passivation and dual-gate modulation

Published:2019-07-03 Issue:3 Volume:20 Page:161-167
ISSN:1598-0316
Container-title:Journal of Information Display
language:en
Short-container-title:Journal of Information Display

Author:

Chen ChangDong¹,Liu ChenNing¹,Zheng JiWen¹,Li GongTan²,Li Shan²,Wu Qian¹,Wu Jin¹,Liu Chuan¹

Affiliation:

1. State Key Lab of Opto-Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, People’s Republic of China

2. Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, People’s Republic of China

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/15980316.2019.1649729

Reference24 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Amorphous Oxide Semiconductor TFTs for Displays and Imaging

4. High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path

5. Transparent, High-Performance Thin-Film Transistors with an InGaZnO/Aligned-SnO2-Nanowire Composite and their Application in Photodetectors

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