Low-resistance phosphorus-doped Si films through blue laser diode annealing
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,General Materials Science
Link
http://www.tandfonline.com/doi/pdf/10.1080/15980316.2014.897265
Reference17 articles.
1. High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C
2. Surface-free technology by laser annealing (SUFTLA) and its application to poly-Si TFT-LCDs on plastic film with integrated drivers
3. Appearance of Single-Crystalline Properties in Fine-Patterned Si Thin Film Transistors (TFTs) by Solid Phase Crystallization (SPC)
4. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
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