Atomic simulation of homoepitaxial AlN on non-polar (11-20) plane-Reference-Cited by-同舟云学术

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Atomic simulation of homoepitaxial AlN on non-polar (11-20) plane

Published:2019-12-06 Issue:9 Volume:46 Page:706-712
ISSN:0892-7022
Container-title:Molecular Simulation
language:en
Short-container-title:Molecular Simulation

Author:

Zhang Libin¹,Zhang Rongjun²,Yan Han³,Sun Kuan¹,Liu Sheng¹⁴,Gan Zhiyin¹

Affiliation:

1. School of Mechanical Science & Engineering, Huazhong University of Science & Technology, Wuhan, People’s Republic of China

2. Guangdong TrueOne Semiconductor Technology Co., Ltd, Foshan, People’s Republic of China

3. School of Mechanical & Electronic Engineering, Wuhan University of Technology, Wuhan, People’s Republic of China

4. School of Power and Mechanical Engineering, Wuhan University, Wuhan, People’s Republic of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemical Engineering,Modeling and Simulation,Information Systems,General Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/08927022.2019.1697816

Reference29 articles.

1. Epitaxially grown AlN and its optical band gap

2. Slender piezoelectric cantilevers of high quality AlN layers sputtered on Ti thin film for MEMS actuators

3. Experimental and theoretical analysis of sublimation growth of AlN bulk crystals

4. Consistent structural properties for AlN, GaN, and InN

5. AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

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