Role of ion energy flux on the structural and morphological properties of silicon oxy-nitride composite films deposited by plasma focus device-Reference-Cited by-同舟云学术

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Role of ion energy flux on the structural and morphological properties of silicon oxy-nitride composite films deposited by plasma focus device

Published:2018-09-17 Issue:11-12 Volume:173 Page:929-943
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Khan Ijaz Ahmad¹,Hussain Syed Anwaar¹,Farid Amjad¹,Hussnain Ali²,Umar Zeshan Adeel³,Rawat Rajdeep Singh⁴,Ahmad Riaz²

Affiliation:

1. Department of Physics, Government College University Faisalabad, Faisalabad, Pakistan

2. Department of Physics, GC University Lahore, Lahore, Pakistan

3. National Centre for Physics, Islamabad, Pakistan

4. National Institute of Education, Nanyang Technological University, Singapore, Singapore

Funder

Higher Education Commission, Pakistan

NIE

NTU

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2018.1512999

Reference43 articles.

1. Nitriding of titanium by using an ion beam delivered by a plasma focus

2. Surface modification of AlFe1.8Zn0.8 alloy by using dense plasma focus

3. Nitrogen ion implantation of silicon in dense plasma focus

4. Formation of a High-Density Deuterium Plasma Focus

5. Measurements of high‐energy deuterons in the plasma‐focus device

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