Radiation hardness of Ge{2}Sb{2}Te{5} thin films to 80 MeV Si ion irradiation-Reference-Cited by-同舟云学术

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Radiation hardness of Ge{2}Sb{2}Te{5} thin films to 80 MeV Si ion irradiation

Published:2021-09-17 Issue:9-10 Volume:176 Page:896-905
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Kanda Neetu¹,Thakur Anup²^ORCID,Singh Fouran³^ORCID,Singh A. P.¹^ORCID

Affiliation:

1. Physics Department, Dr B R Ambedkar National Institute of Technology, Jalandhar, India

2. Advanced Materials Research Lab., Department of Basic and Applied Sciences, Punjabi University, Patiala, India

3. Material Science Group, Inter University Accelerator Centre, New Delhi, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2021.1975707

Reference36 articles.

1. Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5Films

2. Non-volatile memory technologies: emerging concepts and new materials

3. Reliability Study of Phase-Change Nonvolatile Memories

4. Understanding the phase-change mechanism of rewritable optical media

5. An All-Optical, Non-volatile, Bidirectional, Phase-Change Meta-Switch

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories;Materials Advances;2023

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