Study of bias-induced total ionizing dose radiation damage mechanism in SiC MOSFETs-Reference-Cited by-同舟云学术

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Study of bias-induced total ionizing dose radiation damage mechanism in SiC MOSFETs

Published:2023-01-13 Issue:3-4 Volume:178 Page:510-520
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Liang Xiaowen¹²,Pu Xiaojuan¹²,Feng Haonan¹²,Sun Jing¹,Wei Ying¹,Zhang Dan¹²,Li Yudong¹,Yu Xuefeng¹,Guo Qi¹

Affiliation:

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, People's Republic of China

2. University of Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2022.2163485

Reference21 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

2. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

3. Active defects in MOS devices on 4H-SiC: A critical review

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs;IEEE Transactions on Nuclear Science;2024-07

2. Special Degradation Effects of ⁶⁰Co γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs;IEEE Transactions on Nuclear Science;2023-09

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