Effect of optimal rapid thermal alloying of ohmic contacts to microwave pseudomorphic HEMTs
Author:
Affiliation:
1. Gallium Arsenide Enabling Technology Centre (GAETEC), Hyderabad, India
2. Defence Metallurgical Research Laboratory (DMRL), Hyderabad, India
Publisher
Informa UK Limited
Link
https://www.tandfonline.com/doi/pdf/10.1080/10420150.2024.2318709
Reference13 articles.
1. Das, M.B. In HEMTs and HBTs: Devices, Fabrication, and Circuits; Ali, F., Gupta, A., Eds.; Artech House: Boston, 1991; Chapter 2.
2. Yoo J.H.; Lee J.H.; Kim Y.H.; Kim S.K; Yun J.; Kim T.; Lee I.G.; Kim D.H. Analytical Model for the Source Resistance in Advanced InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors Proc. Int. Conf. on Compound Semiconductor Manufacturing Orlando FL USA May 15–18 2023.
3. A broadband GaAs pHEMT low noise driving amplifier with current reuse and self-biasing technique
4. A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT
5. Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology
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