The recursion method and the electronic charge density in diamond and silicon
Author:
Affiliation:
1. Department of Physics, University of Exeter Stocker Road, ExeterEX4 4QL, England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642812.1983.11643258
Reference4 articles.
1. The recursion method and a first-principles tight-binding calculation of the band structures of diamond and silicon
2. First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. I. Self-consistent energy bands, charge densities, and effective masses
3. Wilkinson, J. H., 1965, The Algebraic Eigenvalue Problem (London: Oxford University Press), p. 300.
4. Ground-state properties of diamond
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1. Interaction of vacancies with partial dislocations in silicon;Physical Review B;1997-11-15
2. Shallow electron states of bounded intrinsic stacking faults in silicon;Physical Review B;1997-06-15
3. Electron States of a Vacancy in the Core of the 90° Partial Dislocation in Silicon;physica status solidi (b);1995-06-01
4. Electron states of a stacking fault ribbon in silicon;Solid State Communications;1994-12
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