The recursion method and a first-principles tight-binding calculation of the band structures of diamond and silicon
Author:
Affiliation:
1. Department of Physics, University of Exeter, Stocker Road, Exeter, DevonEX4 4QL, England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642812.1983.11643257
Reference14 articles.
1. Application of the Gaussian‐Type Orbitals for Calculating Energy Band Structures of Solids by the Method of Tight Binding
2. Application of the Method of Tight Binding to the Calculation of the Energy Band Structures of Diamond, Silicon, and Sodium Crystals
3. Orthogonalized linear combinations of atomic orbitals: Application to the calculation of energy bands of Si III
4. Electronic energy structure of amorphous silicon
5. Clementi, E., 1965,Tables of Atomic Functions(New York: IBM), p. 1.
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1. Origin and temperature dependence of the first direct gap of diamond;Physical Review B;1992-08-15
2. Optical band gap of the ternary semiconductor Si1−x−yGexCy;Journal of Applied Physics;1991-08-15
3. Electronic structure and the attractive interaction between atoms on the (001) surface of W;Journal of Physics C: Solid State Physics;1987-04-30
4. The Recursion Method with a Non-Orthogonal Basis;Springer Series in Solid-State Sciences;1987
5. The Lanczos Algorithm in Molecular Dynamics: Calculation of Spectral Densities;Large Scale Eigenvalue Problems, Proceedings of the IBM Europe Institute Workshop on Large Scale Eigenvalue Problems;1986
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