A review of recent developments in aluminum gallium oxide thin films and devices-Reference-Cited by-同舟云学术

A review of recent developments in aluminum gallium oxide thin films and devices

Published:2021-06-28 Issue: Volume: Page:1-32
ISSN:1040-8436
Container-title:Critical Reviews in Solid State and Materials Sciences
language:en
Short-container-title:Critical Reviews in Solid State and Materials Sciences

Author:

Saikumar Ashwin Kumar¹^ORCID,Nehate Shraddha Dhanraj¹^ORCID,Sundaram Kalpathy B.¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL, USA

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,General Chemical Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10408436.2021.1922357

Reference79 articles.

1. Wide band gap ferromagnetic semiconductors and oxides

2. A review of Ga2O3materials, processing, and devices

3. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

4. Optical properties of nanocrystalline La2O3 dielectric films deposited by radio frequency magnetron sputtering

5. Structure, morphology and optical properties of nanocrystalline yttrium oxide (Y2O3) thin films

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