Measurements ofI–Vcharacteristics in InAs/InP quantum dot laser diode
Author:
Publisher
Informa UK Limited
Subject
Atomic and Molecular Physics, and Optics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500340.2012.737480
Reference26 articles.
1. On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers
2. Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers
3. Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers
4. The intrinsic frequency response of 1.3-/spl mu/m InGaAsN lasers in the range T=10/spl deg/C-80/spl deg/C
5. 10 Gbit/s modulation of 1.3 [micro sign]m GaInNAs lasers up to 110°C
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers;Journal of Applied Physics;2018-08-07
2. Fabrication of narrow-striped InAs/GaAs quantum dot laser with wet etching technique;Journal of Modern Optics;2013-07
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