Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes: current performance
Author:
Publisher
Informa UK Limited
Subject
Atomic and Molecular Physics, and Optics
Cited by 93 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrahigh vacuum Raman spectroscopy for the preparation of III–V semiconductor surfaces;Review of Scientific Instruments;2023-12-01
2. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region;Nanomaterials;2023-02-02
3. Double-Pulse Superposition Technique for Avalanche Extraction From Gated InGaAs/InP Single-Photon Detectors;IEEE Electron Device Letters;2022-12
4. Hyperspectral photon-counting optical time domain reflectometry;Quantum Communications and Quantum Imaging XX;2022-10-04
5. Enhanced initial photocurrent caused by the multiplication process at punch-through voltage in InGaAs/InP avalanche photodiode with highly doped charge layer;Infrared Physics & Technology;2022-08
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