Defects in semiconductors
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420158908212982
Reference56 articles.
1. Assumption-Independent Single-Particle Wave Functions for Positrons in Solids: Applications to Angular Distributions in Al and Si
2. Positron annihilation in germanium
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nano-scale properties of defects in compound semiconductor surfaces;Surface Science Reports;1999-01
2. Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy;Physical Review Letters;1997-04-28
3. Positron annihilation studies of defect properties in semi-insulating GaAs;Physica Status Solidi (a);1996-08-16
4. Characterization of defects in Si and SiO2−Si using positrons;Journal of Applied Physics;1994-11
5. Perspectives of positron annihilation spectroscopy in heterogeneous catalysis;Journal of Molecular Catalysis;1993-01
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