The Production of Thin Films of Metals, Metal Silicides, and Metal Borides by Chemical Vapour Deposition Using Single Organometallic Precursors

Author:

Aylett B J

Publisher

Informa UK Limited

Subject

Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics

Reference13 articles.

1. Kirk-Othmer Encyclopaedia of Chemical Technology, 3rd. edn. Interscience, New York, 1982/3; V.I. Matkovich, Boron and Refractory Borides, Springer Verlag, Berlin, 1977; S.P. Murarka, Silicides for VLSI Applications, Academic Press, New York, 1983; B.J. Aylett, Brit. Polymer J., 1986, 18, 359.

2. A review of LPCVD metallization for semiconductor devices

3. Purposeful Chemical Design of Mocvd Precursors for Silicon-Based Systems

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Single-Source MOCVD of Fe/Sn Alloy Thin Films;Chemistry of Materials;2002-03-30

2. Silyl-Komplexe des Molybdäns und Wolframs. Synthese, Reaktivität und Struktur;Journal of Organometallic Chemistry;1998-02

3. Chemical Vapor Deposition (CVD) and Infiltration (CVI);Carbide, Nitride and Boride Materials Synthesis and Processing;1997

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