395 nm Light-Emitting Diode with 647 mW Output Power Realized Using a Double p-Type Aluminum Composition Gradient with Polarization-Induced Hole Doping-Reference-Cited by-同舟云学术

395 nm Light-Emitting Diode with 647 mW Output Power Realized Using a Double p-Type Aluminum Composition Gradient with Polarization-Induced Hole Doping

Published:2021-01-02 Issue:1 Volume:213 Page:174-181
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Yue Wenkai¹²,Li Zhimin¹,Li Peixian¹²,Zhou Xiaowei¹²,Dong Haichen¹,Wang Yanli¹²,Wu Jinxing¹²,Luo Xiaoshun¹,Bai Junchun³

Affiliation:

1. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China

2. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an, China

3. Jiangsu Ginjoe Semiconductor Co., Ltd., Xuzhou, China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2020.1859836

Reference22 articles.

1. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

2. 227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

3. Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping

4. AlGaN/GaN quantum well ultraviolet light emitting diodes

5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

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