Influence of Zr/Sn ratio on the Transverse Piezoelectric Coefficient [Inline formula] in Lanthanum-Doped Lead Zirconate Titanate Stannate Thin Films-Reference-Cited by-同舟云学术

Influence of Zr/Sn ratio on the Transverse Piezoelectric Coefficient [Inline formula] in Lanthanum-Doped Lead Zirconate Titanate Stannate Thin Films

Published:2019-09-02 Issue:1 Volume:201 Page:86-93
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:integrated ferroelectrics

Author:

Priya S. Laxmi¹,Kumar V.¹,Kanno Isaku²

Affiliation:

1. Centre for Materials for Electronics Technology (C-MET), (Scientific society, Ministry of Electronics and Information Technology, Govt. of India), Thrissur, Kerala, India;

2. Mechanical Engineering, Kobe University, Kobe, Japan

Abstract

In this study, we report the effect of Zr/Sn ratio on the Antiferroelectric (AFE) → Ferroelectric (FE) phase transition and transverse piezoelectric characteristics on AFE thin films of compositions having the general formula Pb0.97La0.02(Zr1-x+ySnxTiy)O3, where y = 0.10 and 0.10 ≤ x ≤ 0.15 along the phase boundary in the ternary system Pb(Zr0.50Ti0.50)O3-Pb(Zr0.50Sn0.50)O3-PbZrO3. Thin films having a thickness of 2.0 µm were fabricated on platinised silicon substrates by sol–gel method. Data obtained from dielectric, ferroelectric and structural studies have been combined to explain the mechanism of AFE → FE switching.

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

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1. Improved piezoelectric properties through manganese-doping in phase coexistence region in lead strontium zirconate titanate (PSZT) thin films;Journal of Applied Physics;2023-04-24