Nonlinear DC equivalent circuits for ferroelectric memristor and Its FSM application-Reference-Cited by-同舟云学术

Nonlinear DC equivalent circuits for ferroelectric memristor and Its FSM application

Published:2018-09-02 Issue:1 Volume:192 Page:16-27
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Michael Preetam Raj P.¹,Ranjan Kalita Amlan¹,Hudait Mantu K.²,Priya Shashank³,Kundu Souvik¹

Affiliation:

1. Department of Electrical and Electronics Engineering, Birla Institute of Technology & Science (BITS) Pilani, Hyderabad Campus, Hyderabad, India;

2. Department of Electrical Engineering and Computer Science, Virginia Tech, Blacksburg, Virginia, USA;

3. Department of Mechanical Engineering, CEHMS, Virginia Tech, Blacksburg, Virginia, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2018.1521667

Reference22 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. Resistance switching memories are memristors

4. A Boundary Condition-Based Approach to the Modeling of Memristor Nanostructures

5. The fourth element: characteristics, modelling and electromagnetic theory of the memristor

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